规格：阈值电压 Vgs 1.4V,
DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 1.4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1 ohm, 4 V, 1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 mA, 240 V, 7.7 ohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 190 mA, 100 V, 2.4 ohm, 10 V, 1.4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0058 ohm, 10 V, 1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.023 ohm, 10 V, 1.4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道与P沟道, 40V, 6.8A, SOIC-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 950 μohm, 10 V, 1.4 V
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 100A, 950uOHM, SON-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 90 A, 25 V, 0.0011 ohm, 10 V, 1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.044 ohm, 10 V, 1.4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 30 V, 3.6 mohm, 10 V, 1.4 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 6.8 A, 40 V, 29.5 mohm, 10 V, 1.4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.004 ohm, 10 V, 1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.153 ohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4.2 ohm, 10 V, 1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 30 V, 10.5 mohm, 10 V, 1.4 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 40 A, 25 V, 1.8 mohm, 4.5 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 mA, 240 V, 7.7 ohm, 10 V, 1.4 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 2.6 A, 200 V, 1.08 ohm, 4.5 V, 1.4 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0035 ohm, 10 V, 1.4 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0019 ohm, 10 V, 1.4 V
(EN)
SEMELAB
晶体管, MOSFET, N沟道, 170 mA, 60 V, 3 ohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
(EN)
