规格：阈值电压 Vgs -1.2V,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -780 mA, -20 V, 0.38 ohm, -4.5 V, -1.2 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET
(EN)
VISHAY
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.0074 ohm, -4.5 V, -1.2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0058 ohm, -10 V, -1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -600 mA, -20 V, 0.3 ohm, -4.5 V, -1.2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -15 A, -20 V, 0.0082 ohm, -4.5 V, -1.2 V
(EN)MICROCHIP
晶体管, MOSFET, P沟道, 2 A, -6 V, 0.07 ohm, -4.5 V, -1.2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4.4 A, -40 V, 0.064 ohm, -10 V, -1.2 V
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual P Channel, -880 mA, -20 V, 0.215 ohm, -4.5 V, -1.2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.015 ohm, -4.5 V, -1.2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -15A, -20V, 8-SOIC
(EN)
VISHAY
晶体管, MOSFET, P沟道, -19.7 A, -30 V, 8.1 mohm, -10 V, -1.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -50 A, -30 V, 4.2 mohm, -10 V, -1.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.2 A, -40 V, 0.036 ohm, -10 V, -1.2 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -8 A, -40 V, 0.021 ohm, -10 V, -1.2 V
(EN)
VISHAY
MOSFET, P CHANNEL, -30V, -40A, POWERPAK SO-8
(EN)
INFINEON
晶体管, MOSFET, P沟道, 4 A, -20 V, 0.0471 ohm, 4.5 V, -1.2 V
(EN)MICREL SEMICONDUCTOR
晶体管, MOSFET, P沟道, 2 A, -6 V, 0.07 ohm, -4.5 V, -1.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -16.1 A, -40 V, 0.018 ohm, -4.5 V, -1.2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, -19.7A, SOIC-8
(EN)
VISHAY
MOSFET, P CHANNEL, -40V, -16.1A, SOIC-8
(EN)
VISHAY
MOSFET, P CHANNEL, -30V, -5.9A, SOT-23-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5.9 A, -30 V, 0.037 ohm, -10 V, -1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -6 A, -30 V, 0.045 ohm, -10 V, -1.2 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -40V, -4.4A, SOT-23-3
(EN)
