规格：阈值电压 Vgs -900mV,
INFINEON
晶体管, MOSFET, P沟道, -390 mA, -20 V, 0.7 ohm, -4.5 V, -900 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -300 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -390 mA, -20 V, 0.7 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 0.122 ohm, -4.5 V, -900 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.04 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.3 A, -20 V, 115 mohm, -4.5 V, -900 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4.2 A, -20 V, 0.04 ohm, -4.5 V, -900 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 1.9 A, -20 V, 0.127 ohm, -4.5 V, -900 mV
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -20 V, 0.175 ohm, -4.5 V, -900 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, 16 A, -12 V, 7 mohm, -4.5 V, -900 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.029 ohm, -4.5 V, -900 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -16 A, -12 V, 0.007 ohm, -4.5 V, -900 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -3A, -12V, 750mW
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -200 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.054 ohm, -4.5 V, -900 mV
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, 9.2 A, -12 V, 17 mohm, -4.5 V, -900 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.0067 ohm, -4.5 V, -900 mV
(EN)
DIODES INC.
MOSFET Transistor, P Channel, -4.2 A, -20 V, 0.04 ohm, -4.5 V, -900 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, 11.5 A, -12 V, 14 mohm, -4.5 V, -900 mV
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -220 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.5 A, -20 V, 35 mohm, -4.5 V, -900 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.023 ohm, -1.8 V, -900 mV
(EN)
