DIODES INC.
晶体管, MOSFET, N沟道, 1.3 A, 20 V, 0.175 ohm, 4.5 V, 950 mV
INFINEON
晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.106 ohm, 4.5 V, 950 mV
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.04 ohm, 4.5 V, 950 mV
DIODES INC.
晶体管, MOSFET, N沟道, 5.47 A, 20 V, 0.021 ohm, 10 V, 950 mV
INFINEON
晶体管, MOSFET, N沟道, 3.8 A, 20 V, 0.017 ohm, 4.5 V, 950 mV
VISHAY
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 33 mohm, 4.5 V, 950 mV
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 8 A, 12 V, 0.0099 ohm, 4.5 V, 950 mV
INFINEON
双路场效应管, MOSFET, N和P, 1.5 A, 20 V, 0.108 ohm, 4.5 V, 950 mV
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 0.0119 ohm, 8 V, 950 mV
INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 2.1 mohm, 4.5 V, 950 mV
INFINEON
晶体管, MOSFET, N沟道, 80 A, 20 V, 0.0035 ohm, 4.5 V, 950 mV
INFINEON
晶体管, MOSFET, N沟道, 80 A, 20 V, 0.0035 ohm, 4.5 V, 950 mV
INFINEON
双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.108 ohm, 4.5 V, 950 mV
INFINEON
双路场效应管, MOSFET, 互补晶体管, N和P沟道, 1.5 A, 20 V, 0.108 ohm, 4.5 V, 950 mV