规格：阈值电压 Vgs -800mV,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -20 V, 0.06 ohm, -4.5 V, -800 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -20 V, 130 mohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 4.5 A, -20 V, 0.037 ohm, 12 V, -800 mV
(EN)
TOSHIBA
晶体管, MOSFET, P沟道, -18 A, -30 V, 0.0026 ohm, -10 V, -800 mV
(EN)
TOSHIBA
晶体管, MOSFET, P沟道, -34 A, -30 V, 0.0037 ohm, -10 V, -800 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.2 A, -12 V, 0.0068 ohm, -1.8 V, -800 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -7.2 A, -20 V, 25 mohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 4.5A, SSOT-6
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 4.5 A, -20 V, 0.039 ohm, 12 V, -800 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.6 A, -20 V, 0.056 ohm, -4.5 V, -800 mV
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -550 mA, -20 V, 0.67 ohm, -4.5 V, -800 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -8V, 1.6A, SC-70
(EN)TOSHIBA
晶体管, MOSFET, 功率, P沟道, -16 A, -30 V, 0.0039 ohm, -10 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.036 ohm, -4.5 V, -800 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3 A, -8 V, 0.0162 ohm, -4.5 V, -800 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.027 ohm, -4.5 V, -800 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.066 ohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -20 V, 110 mohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 2A, SuperSOT, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.088 ohm, -4.5 V, -800 mV
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, P沟道, -10 A, -20 V, 0.007 ohm, -4.5 V, -800 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, 14A, SOIC
(EN)
VISHAY
场效应管, MOSFET, P沟道, -8V, 4.1A, TO-236
(EN)
