规格：阈值电压 Vgs -650mV,
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -5.4 A, -12 V, 0.029 ohm, -4.5 V, -650 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.8 A, -12 V, 0.097 ohm, -4.5 V, -650 mV
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -3 A, -20 V, 0.031 ohm, -4.5 V, -650 mV
(EN)
NEXPERIA
场效应管, MOSFET, P 通道, -20V, -3.9A, 3-SOT-23
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 95 mohm, -4.5 V, -650 mV
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -4.5 A, -20 V, 0.055 ohm, -4.5 V, -650 mV
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -650 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.6 A, -20 V, 0.048 ohm, -4.5 V, -650 mV
(EN)NEXPERIA
场效应管, MOSFET, P 通道, -20V, -3.9A, 3-SOT-23
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -5 A, -20 V, 39 mohm, -4.5 V, -650 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -5 A, -20 V, 39 mohm, -4.5 V, -650 mV
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双P沟道, -1.2 A, -20 V, 95 mohm, -4.5 V, -650 mV
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.026 ohm, -4.5 V, -650 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.6 A, -20 V, 0.048 ohm, -4.5 V, -650 mV
(EN)
