规格：阈值电压 Vgs -2V,
NEXPERIA
晶体管, MOSFET, P沟道, -130 mA, -50 V, 6 ohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 130 mA, -50 V, 10 ohm, 5 V, -2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 11mA
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11 A, -30 V, 0.0108 ohm, -10 V, -2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.1 A, -30 V, 300 mohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5.3 A, -60 V, 0.079 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -30 V, 0.0036 ohm, -10 V, -2 V
(EN)
VISHAY
MOSFET, P-CH, -40V, -30A, POWERPAK SO
(EN)
VISHAY
MOSFET, P CHANNEL, -60V, -190mA, SC-89-6
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 1.6 A, -100 V, 350 mohm, -10 V, -2 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -2.6 A, -100 V, 0.15 ohm, -10 V, -2 V
(EN)ROHM
晶体管, MOSFET, AEC-Q101, P沟道, -2.5 A, -20 V, 0.07 ohm, -4.5 V, -2 V
(EN)
VISHAY
MOSFET, P CHANNEL, -60V, -190mA, SOT-416-3
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 mA, 600 V, 280 ohm, 10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -17 A, -60 V, 0.055 ohm, -10 V, -2 V
(EN)
VISHAY
MOSFET, P CHANNEL, -100V, -5.6A, TO-252-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, -120 A, -60 V, 0.0056 ohm, -10 V, -2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0025 ohm, -10 V, -2 V
(EN)
VISHAY
MOSFET, P CHANNEL, -60V, -1.8A, SOT-223-4
(EN)ROHM
晶体管, MOSFET, 低电压, P沟道, 3.2 A, -20 V, 125 mohm, -4.5 V, -2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -1.6 A, -60 V, 0.23 ohm, -10 V, -2 V
(EN)
