品牌：STMICROELECTRONICS,规格：阈值电压 Vgs 4V,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 1.2 kV, 1.95 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.23 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率MOSFET, N沟道 60V 30A
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.25 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 90 A, 40 V, 3.3 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 62 A, 33 V, 12.5 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.37 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 84 A, 650 V, 0.024 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 24 A, 600 V, 0.11 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, N Channel, 34 A, 600 V, 0.085 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19.5 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 28 A, 600 V, 0.094 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.56 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 22 A, 650 V, 0.125 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 35 A, 600 V, 0.075 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.56 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.3 A, 1.5 kV, 6 ohm, 10 V, 4 V
(EN)
