规格：阈值电压 Vgs 4.5V,
VISHAY
晶体管, MOSFET, N沟道, 26 A, 150 V, 0.036 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 44 A, 650 V, 0.059 ohm, 10 V, 4.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 58 A, 800 V, 0.054 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.245 ohm, 10 V, 4.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 650 V, 190 mohm, 10 V, 4.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 100 V, 18 mohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 10 A, 250 V, 0.32 ohm, 10 V, 4.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.16 ohm, 10 V, 4.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, SuperFET III, N沟道, 44 A, 650 V, 0.059 ohm, 10 V, 4.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 3.2A, 200V, PowerPAK SO
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 3.6 A, 600 V, 2.2 ohm, 10 V, 4.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 4.5 V
(EN)
STMICROELECTRONICS
MOSFET Transistor, N Channel, 200 A, 40 V, 0.0008 ohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 6 A, 1 kV, 2 ohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 26 A, 600 V, 250 mohm, 10 V, 4.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 74W, TO-262
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q-Class, N沟道, 27 A, 800 V, 0.32 ohm, 10 V, 4.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 44 A, 600 V, 130 mohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 60 A, 600 V, 75 mohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 80 A, 500 V, 55 mohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 27 A, 800 V, 320 mohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 55 A, 500 V, 80 mohm, 10 V, 4.5 V
(EN)
