规格：阈值电压 Vgs 3V,
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 500 V, 2.7 ohm, 13 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.4 A, 700 V, 1.35 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.2 A, 60 V, 0.018 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 17 A, 60 V, 70 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0034 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 46 A, 40 V, 11 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, N沟道, 12A, 20V, 3.5W
(EN)INFINEON
晶体管, MOSFET, N沟道, 89 A, 55 V, 8 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.104 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.8 A, 500 V, 1.26 ohm, 13 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 75 A, 60 V, 4580 μohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6.8 A, 600 V, 0.9 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 1.2 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 24 A, 80 V, 37 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 72 A, 100 V, 0.0102 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 500 V, 2.6 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 1970 μohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 650 V, 0.85 ohm, 10 V, 3 V
(EN)
