规格：阈值电压 Vgs 3V,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0029 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12.5 A, 100 V, 33 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0041 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 200 V, 0.038 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 28.1 A, 100 V, 30.8 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 90 A, 40 V, 4.4 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.011 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 50 A, 40 V, 0.0048 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 150 A, 80 V, 0.0024 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 30 A, 40 V, 0.0092 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.004 ohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 30 A, 40 V, 0.0079 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 3.2 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 500 V, 0.53 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.7 A, 100 V, 0.0854 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 35.8 A, 30 V, 0.0011 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 1.22 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.005 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0037 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 86 A, 40 V, 0.0043 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, 双N沟道, 7.5 A, 40 V, 0.015 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V
(EN)
VISHAY
N CHANNEL MOSFET, 30V, 10.1A, SC-70
(EN)
