规格：阈值电压 Vgs 3V,
INFINEON
晶体管, MOSFET, N沟道, 12 A, 550 V, 0.27 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.317 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0019 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 7.1 A, 550 V, 0.47 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 8.5 A, 250 V, 140 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 77 A, 40 V, 0.0062 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.059 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.46 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 3.2A, 60V, 2W
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 22 A, 250 V, 55 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0019 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 5.6A, POWERPAK 1212, 整卷
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 10.3A, SOIC-8, 整卷
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 13 A, 100 V, 130 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00188 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 22 A, 60 V, 0.027 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 17 A, 100 V, 56.6 mohm, 10 V, 3 V
(EN)
