规格：阈值电压 Vgs 3V,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.6 A, 500 V, 1.85 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0126 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 21.4 A, 60 V, 0.025 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 900 V, 0.28 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.162 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 12 A, 600 V, 0.26 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223, 整卷
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 108 A, 40 V, 0.0025 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 6.9 A, 30 V, 0.023 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00125 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 80 V, 0.0063 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11.1 A, 600 V, 0.27 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 3.2A, TO-236
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 55 V, 0.03 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 89 A, 80 V, 0.0073 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 500 V, 2.7 ohm, 13 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.0105 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 3.2 A, 650 V, 1.26 ohm, 10 V, 3 V
(EN)
