规格：阈值电压 Vgs 3V,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 68 A, 600 V, 0.03 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, CoolMOS, N沟道, 52 A, 500 V, 0.06 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 120 V, 0.0041 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 60 V, 28 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 43 A, 100 V, 15 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 12A TO-252AA
(EN)INFINEON
晶体管, MOSFET, N沟道, 84 A, 200 V, 0.0106 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 0.5 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 300 V, 37 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0046 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18.5 A, 500 V, 0.17 ohm, 13 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 23 A, 400 V, 0.15 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0015 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 88 A, 200 V, 0.0096 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.26 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 60 V, 0.00944 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 270 A, 60 V, 2.1 mohm, 20 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 25 A, 650 V, 0.11 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 61 A, 250 V, 0.019 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 8.1 A, 600 V, 0.47 ohm, 10 V, 3 V
(EN)
