规格：阈值电压 Vgs 3V,
INFINEON
晶体管, MOSFET, N沟道, 13 A, 550 V, 0.22 ohm, 10 V, 3 V
(EN)
VISHAY
双路场效应管, MOSFET, LITTLE FOOT, 双N沟道, 5.8 A, 30 V, 0.0155 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 290 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 8.5 A, 500 V, 0.4 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.135 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16 A, 650 V, 0.18 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.044 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.02 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 150 A, 60 V, 0.00197 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.002 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 13.5 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 77.5 A, 600 V, 0.037 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 900V, 1.8OHM, 5.4A, TO-263-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 41 A, 120 V, 0.0126 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.0125 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 37.9 A, 600 V, 0.09 ohm, 10 V, 3 V
(EN)FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0017 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 13.1 A, 600 V, 0.41 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 400 V, 0.85 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0013 ohm, 10 V, 3 V
(EN)
