规格：阈值电压 Vgs 3V,
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0072 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 3.9 A, 30 V, 53 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, N沟道
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.33 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 120 V, 0.0029 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 75 V, 0.0018 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 12 A, 100 V, 0.08 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 250 V, 0.097 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 34 A, 200 V, 0.028 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 100 V, 0.102 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 2.3 A, 25 V, 100 mohm, 10 V, 3 V
(EN)
INFINEON
MOSFET, N CHANNEL, 40V, 56A, TO-252AA-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.012 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 82 A, 80 V, 5.8 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 0.00055 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 130 A, 150 V, 0.0052 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.0065 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 55 V, 37 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 4A, TO-236
(EN)
