规格：阈值电压 Vgs 3V,
NEXPERIA
晶体管, MOSFET, N沟道, 52 A, 40 V, 0.0093 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.9 A, 40 V, 0.036 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.3 A, 60 V, 22 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 150 V, 0.074 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 500 mA, 60 V, 5 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 60 V, 100 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 100 V, 0.4 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 0.086Ω, 2.7A, SUPERSOT-6
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.006 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 100 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.75 A, 100 V, 0.2 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.012 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.0195 ohm, 10 V, 3 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 9.5A, SOIC-8
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 57 A, 100 V, 0.013 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 13.5 A, 30 V, 0.007 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 50 A, 60 V, 12.6 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 3.9 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 3 V
(EN)
