规格：阈值电压 Vgs 3.75V,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.9 A, 900 V, 1.56 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 800 V, 4.5 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 400 V, 550 mohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.9 A, 900 V, 1.56 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.3 A, 1 kV, 1.85 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 600 mA, 450 V, 3.2 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.6 A, 900 V, 1.1 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 800 V, 0.78 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 300 mA, 800 V, 13 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.85 A, 1 kV, 6.25 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 600 mA, 450 V, 3.2 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.7 A, 400 V, 850 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.85 A, 1 kV, 6.25 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 1 kV, 3.7 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8.3 A, 1 kV, 1.38 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.25 A, 800 V, 650 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 850 mohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3 A, 500 V, 2.3 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.6 A, 800 V, 1.5 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 300 V, 0.033 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10.5 A, 800 V, 0.65 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.8 A, 900 V, 2 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 500 V, 1.5 ohm, 10 V, 3.75 V
(EN)
