品牌：STMICROELECTRONICS,规格：阈值电压 Vgs 3.75V,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 300 mA, 600 V, 15 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 600 V, 1 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 525 V, 1.28 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 800 V, 3.8 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.5 A, 900 V, 4.1 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.2 A, 800 V, 1.8 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.1 A, 900 V, 5 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.05 A, 900 V, 5 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 620 V, 0.95 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.8 A, 400 V, 3 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.3 A, 800 V, 1.9 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 300 V, 400 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 750 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 600 V, 1.2 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 600 V, 1.2 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.23 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 13 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 500 V, 1.22 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 800 V, 4.5 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 250 mA, 800 V, 13 ohm, 30 V, 3.75 V
(EN)
