规格：阈值电压 Vgs -2.1V,
DIODES INC.
晶体管, MOSFET, P沟道, -3.8 A, -30 V, 0.065 ohm, -10 V, -2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.8 A, -30 V, 0.016 ohm, -10 V, -2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.8 A, -30 V, 0.03 ohm, 25 V, -2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道, -30V, 8.8A, SOIC
(EN)
VISHAY
晶体管, MOSFET, P沟道, -19.2 A, -30 V, 0.0127 ohm, -4.5 V, -2.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -30 V, 0.069 ohm, -10 V, -2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 6.8A, MICROFET 2X2
(EN)VISHAY
MOSFET, P CHANNEL, -30V, 0.0127OHM, -19.2A, SOIC-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 0.069Ω, 3A, SOIC-8
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -30 V, 0.069 ohm, -10 V, -2.1 V
(EN)
