品牌：TEXAS INSTRUMENTS,规格：输出电流峰值 5A,
TEXAS INSTRUMENTS
芯片, 隔离晶体管, IGBT/场效应管, MOSFET驱动器, 5.5V, SOIC
(EN)
TEXAS INSTRUMENTS
MOSFET & IGBT驱动器, AEC-Q100, 3 V至5.5 V电源, 2.5 A & 5 A输出, 110 ns继电器, SOIC-16
(EN)TEXAS INSTRUMENTS
MOSFET & IGBT驱动器, AEC-Q100, 2.25 V至5.5 V电源, 2.5 A & 5 A输出, 110 ns继电器, SOIC-16
(EN)TEXAS INSTRUMENTS
MOSFET & IGBT驱动器, AEC-Q100, 3 V至5.5 V电源, 2.5 A & 5 A输出, 110 ns继电器, SOIC-16
(EN)
TEXAS INSTRUMENTS
门驱动器, IGBT/MOSFET, 高压侧和低压侧, 10V-32V电源, 5A输出, 17ns延迟, SOT-23-6
(EN)
TEXAS INSTRUMENTS
双路驱动器, MOSFET, 低压侧, 3.5V-14V电源, 5A输出, 25ns延迟, SOIC-8
(EN)
TEXAS INSTRUMENTS
驱动器, MOSFET, 半桥, 4.5V-5.5V电源, 5A输出, WSON-10
(EN)
TEXAS INSTRUMENTS
驱动器芯片, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SON-8
(EN)TEXAS INSTRUMENTS
门驱动器, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
芯片, IGBT/MOSFET, 低压侧, 4.5V-18V电源, 5A输出, SOIC-8
(EN)TEXAS INSTRUMENTS
芯片, 场效应管, MOSFET/晶体管, IGBT驱动器, 低/高压侧, SOIC-8
(EN)TEXAS INSTRUMENTS
芯片, 场效应管, MOSFET/晶体管, IGBT 驱动器, 反相/非反相, SOIC-16
(EN)TEXAS INSTRUMENTS
门驱动器, IGBT/MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SOIC-8
(EN)
TEXAS INSTRUMENTS
半桥驱动器, 4.5V-5.5V电源, 5A输出, 26.5ns延迟, DSBGA-12
(EN)TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
复合门驱动器, 低压侧, 3.5V-14V电源, 5A输出, 25ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
双路驱动器, MOSFET, 低压侧, 3.5V-14V电源, 5A输出, 25ns延迟, SOIC-8
(EN)
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 6ns延迟, DIP-8
(EN)
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, MSOP-8
(EN)
TEXAS INSTRUMENTS
DRIVER, IGBT MOSFET, 1 CHANNEL, 6-SOT-23
(EN)TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SOIC-8
(EN)
TEXAS INSTRUMENTS
芯片, 场效应管, MOSFET/晶体管, IGBT驱动器, 反相/非反相, WSOIC16
(EN)TEXAS INSTRUMENTS
双功率驱动器, 低压侧, 3.5V-14V电源, 5A输出, 25ns延迟, MSOP-8
(EN)
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 高压侧和低压侧, 10V-35V电源, 5A输出, 17ns延迟, SOT-23-5
(EN)TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 高压侧和低压侧, 10V-35V电源, 5A输出, 17ns延迟, SOT-23-5
(EN)
