NEXPERIA
单管二极管 齐纳, 4.7 V, 500 mW, SOD-80C, 5 %, 2 引脚, 200 °C
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 40 V, 250 MHz, 625 mW, 600 mA, 100 hFE
ON SEMICONDUCTOR/FAIRCHILD
单管二极管 齐纳, 6.8 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
VISHAY
齐纳二极管, 1.3W, 91V, DO-41
VISHAY
齐纳二极管, Vz: 16V
VISHAY
齐纳二极管, 2.3W, 15V, DO-219AB
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 280 mA, 60 V, 2 ohm, 10 V, 2.1 V
ON SEMICONDUCTOR
单晶体管 双极, NPN, 40 V, 250 MHz, 225 mW, 600 mA, 20 hFE
ON SEMICONDUCTOR
单晶体管 双极, PNP, -40 V, 250 MHz, 225 mW, -200 mA, 30 hFE
VISHAY
齐纳二极管, VZ:30V
ON SEMICONDUCTOR
晶体管, JFET, SOT-23封装
VISHAY
齐纳二极管, 封装:DO-35
MULTICOMP
双极晶体管
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 20 V, 35 mohm, 4.5 V, 850 mV
VISHAY
齐纳二极管, 1.3W, 27V, DO-41
ON SEMICONDUCTOR/FAIRCHILD
单管二极管 齐纳, 5.1 V, 350 mW, SOT-23, 5 %, 3 引脚, 150 °C
ON SEMICONDUCTOR
齐纳二极管
VISHAY
齐纳二极管, VZ:13V
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 10 kohm, 47 kohm, 4.7 电阻比率
ON SEMICONDUCTOR
射频双极晶体管