品牌：TEXAS INSTRUMENTS,规格：汽车质量标准 -,
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 500 mA, SOIC
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 6SON
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0077 ohm, -4.5 V, 900 mV
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿晶体管, NPN, 50 V, 500 mA, DIP
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.6 A, 12 V, 0.063 ohm, 4.5 V, 850 mV
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, SOIC
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, TSSOP
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -5.4 A, -12 V, 0.029 ohm, -4.5 V, -650 mV
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.8 A, -12 V, 0.097 ohm, -4.5 V, -650 mV
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 350 mA, DIP
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0053 ohm, 10 V, 1.9 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 5A, 0.024OHM, SON-6
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 170 A, 60 V, 0.0033 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 1.5 A, 30 V, 0.185 ohm, 8 V, 850 mV
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 5 A, 30 V, 0.027 ohm, 10 V, 1.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 47 A, 30 V, 0.0094 ohm, 4.5 V, 1.3 V
(EN)TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 500 mA, 1000 hFE, DIP
(EN)
TEXAS INSTRUMENTS
达林顿晶体管阵列, NPN, 7, 50V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 950 μohm, 10 V, 1.4 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0055 ohm, 10 V, 1.5 V
(EN)
