规格：漏源电压, Vds 8V,
INFINEON
晶体管, MOSFET, N沟道, 40 mA, 8 V
(EN)
INFINEON
晶体管, 射频FET, 8 V, 40 mA, 200 mW, SOT-143
(EN)INFINEON
晶体管, MOSFET, N沟道, 250 mA, 8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 8 V, 0.014 ohm, 4.5 V, 800 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 8 V, 0.009 ohm, 4.5 V, 800 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10 A, 8 V, 0.015 ohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N和P沟道, 8 V, 0.04 ohm, 4.5 V, 1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 430 mA, 8 V, 0.5 ohm, 4.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 8 V, 0.014 ohm, 4.5 V, 800 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 8 V, 0.019 ohm, 4.5 V, 350 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 8 V, 0.0078 ohm, 4.5 V, 350 mV
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 430 mA, 8 V, 0.5 ohm, 4.5 V, 4.5 V
(EN)
