规格：漏源电压, Vds 650V,
INFINEON
功率场效应管, MOSFET, N沟道, 8 A, 650 V, 0.168 ohm, 10 V, 3.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 96 A, 650 V, 0.019 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.55 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 2 A, 650 V, 2.3 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.85 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 8 A, 650 V, 0.5 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 8 A, 650 V, 0.5 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 2 A, 650 V, 2.3 ohm, 10 V, 5 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.225 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.049 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6.6 A, 650 V, 0.59 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 19 A, 650 V, 0.14 ohm, 10 V, 4.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 42 A, 650 V, 0.056 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 34 A, 650 V, 0.1 ohm, 10 V, 5 V
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 70 A, 650 V, 0.03 ohm, 18 V, 5.6 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 100 A, 650 V, 0.03 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V
(EN)
