规格：漏源电压, Vds 650V,
VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 7.9 A, 650 V, 0.52 ohm, 10 V, 2 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 5.6 A, 650 V, 0.755 ohm, 10 V, 2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 31.2 A, 650 V, 0.099 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.115 ohm, 10 V, 3.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 28 A, 650 V, 0.062 ohm, 10 V, 3.5 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 1 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 650 V, 0.85 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 47 A, 650 V, 70 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 5.2 A, 650 V, 1.35 ohm, 10 V, 3 V
(EN)
