规格：漏源电压, Vds 600V,
INFINEON
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.297 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8.4 A, 600 V, 0.68 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 7.1 A, 600 V, 0.98 ohm, 10 V, 3.9 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16.8 A, 600 V, 0.207 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 10.3 A, 600 V, 0.54 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.9 A, 600 V, 3.6 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 57.7 A, 600 V, 0.067 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.113 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 600V, 22A, TO-220F
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 9.9 A, 600 V, 0.54 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 23.8 A, 600 V, 0.144 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 160 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2.5 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 14.7 A, 600 V, 0.34 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7.5 A, 600 V, 0.55 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 18 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 47A, TO247AC-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3.9 A, 600 V, 1 ohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 29A, TO-247AC-3
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 0.085 ohm, 10 V, 3.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.22 ohm, 10 V, 3 V
(EN)
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V
(EN)
