规格：漏源电压, Vds 600V,
VISHAY
场效应管, MOSFET, N沟道, 600V, 3.6ATO-262
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 16 A, 600 V, 400 mohm, 10 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
VISHAY
场效应管, MOSFET, N沟道, 170W, D2-PAK
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 48 A, 600 V, 135 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, 极性FET, N沟道, 64 A, 600 V, 96 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 64 A, 600 V, 0.1 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, LINEAR L2?, N沟道, 30 A, 600 V, 240 mohm, 10 V, 2.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 3 A, 600 V, 2.9 ohm, 10 V, 5.5 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 600V, 3A, TO-220FP
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 22 A, 600 V, 160 mohm, 10 V, 2 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.057 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 29A, TO-220AB-3
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 33A, TO-220AB-3
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 29A, TO-247AD-3
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 3.2 A, 600 V, 1.26 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.85 ohm, 10 V, 3 V
(EN)
