规格：漏源电压, Vds 40V,
NEXPERIA
晶体管, MOSFET, N沟道, 52 A, 40 V, 0.0093 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.9 A, 40 V, 0.036 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.6 A, 40 V, 0.044 ohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 40 V, 6.9 mohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 9 A, 40 V, 0.019 ohm, 10 V, 1.7 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0072 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0039 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 29 mohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 40V TO-252
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.00823 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 15.2A
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 3.9 mohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 40V, 209A, 直接FET, ME-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0029 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0013 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0011 ohm, 10 V, 2 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.007 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.0027 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0018 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.002 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 73 A, 40 V, 4.9 mohm, 10 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 58 A, 40 V, 0.005 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 8.1 mohm, 10 V, 1.2 V
(EN)INFINEON
场效应管, MOSFET, N沟道, 40V, 375A, 直接FET, L8-11
(EN)
