规格：漏源电压, Vds 200V,
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 2.6 A, 200 V, 1.08 ohm, 4.5 V, 1.4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 120 A, 200 V, 17 mohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 150W, TO-262
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 58 A, 200 V, 40 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 600 mA, 200 V, 2.2 ohm, 10 V, 5.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.54 ohm, 10 V, 5.25 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 20 A, 200 V, 0.1 ohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 3 A, 200 V, 0.62 ohm, 10 V, 5.2 V
(EN)ROHM
晶体管, MOSFET, N沟道, 16 A, 200 V, 0.135 ohm, 10 V, 5.25 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 200V, 18A, TO-220
(EN)
IXYS RF
晶体管, 射频FET, 200 V, 25 A, 590 W, 100 MHz, DE-275
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 32 A, 200 V, 68 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 140 A, 200 V, 0.01 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.5 A, 200 V, 170 mohm, 10 V, 5.5 V
(EN)SEMELAB
晶体管, MOSFET, N沟道, 8 A, 200 V, 1.5 ohm, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.1 A, 200 V, 80 mohm, 10 V, 4.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 200 V, 85 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 200 V, 60 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 120 A, 200 V, 22 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 90 A, 200 V, 23 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 200 V, 60 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9 A, 200 V, 0.4 ohm, 5 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 200 V, 0.8 ohm, 5 V, 2 V
(EN)
