规格：漏源电压, Vds 200V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.9 A, 200 V, 0.059 ohm, 10 V, 2.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.3 A, 200 V, 800 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 200 V, 800 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 850 mA, 200 V, 1.1 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 72 A, 200 V, 0.0186 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 200 V, 0.3 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 600 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15.2 A, 200 V, 0.077 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 130 A, 200 V, 0.008 ohm, 30 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.5 A, 200 V, 650 mohm, 5 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 200 V, 0.11 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 36 A, 200 V, 0.027 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 200 V, 125 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.8 A, 200 V, 0.29 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 50A, TO-247AC
INFINEON
晶体管, MOSFET, N沟道, 13 A, 200 V, 0.235 ohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 94 A, 200 V, 23 mohm, 10 V, 5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 200V, 44A, D2-PAK
(EN)INFINEON
晶体管, MOSFET, N沟道, 34 A, 200 V, 0.028 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 39 A, 200 V, 66 mohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 25 A, 200 V, 0.12 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 19.4 A, 200 V, 120 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7 A, 200 V, 0.194 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V
(EN)
