规格：漏源电压, Vds 200V,
VISHAY
场效应管, MOSFET, N沟道, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.2 A, 200 V, 65 mohm, 10 V, 4.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 2.6A, SC-70
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7 A, 200 V, 0.3 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 200 V, 0.065 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 200 V, 45 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 200 V, 45 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 200 V, 125 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.5 A, 200 V, 650 mohm, 5 V, 2.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 200 V, 100 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 200 V, 38 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)
