规格：漏源电压, Vds -20V,
VISHAY
MOSFET, P CHANNEL, -20V, -9A, POWERPAK SC75-6
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3 A, -20 V, 66 mohm, -4.5 V, -900 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.9 A, -20 V, 0.08 ohm, -4.5 V, -450 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 150 mA, -20 V, 8 ohm, -4.5 V, -1 V
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, -60A, POWERPAK SO-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -20 V, 14 mohm, -4.5 V, -830 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, 61A, 1206
(EN)
ROHM
晶体管, MOSFET, P沟道, -100 mA, -20 V, 2.5 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.6 A, -20 V, 0.04 ohm, -4.5 V, -500 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -14 A, -20 V, 0.006 ohm, -4.5 V, -400 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4.1 A, -20 V, 0.048 ohm, -4.5 V, -1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 0.048 ohm, -4.5 V, -1.4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 130 mohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 55 mohm, -4.5 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.027 ohm, -4.5 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -4A, SOIC-8
(EN)
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, 双P沟道, -1.03 A, -20 V, 0.5 ohm, -4.5 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 125 mohm, -4.5 V, -1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.175 ohm, -8 V, -950 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, 5.3 A, -20 V, 60 mohm, -10 V, -2.5 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -4.5 A, -20 V, 0.058 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, 3.6 A, -20 V, 90 mohm, -10 V, -1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -10 A, -20 V, 0.018 ohm, -4.5 V, -1 V
(EN)
