规格：漏源电压, Vds -20V,
VISHAY
晶体管, P沟道
(EN)VISHAY
晶体管, P沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, -13.4 A, -20 V, 0.0125 ohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, 9.8 A, -20 V, 0.0085 ohm, 12 V, -1.4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -18.6 A, -20 V, 0.006 ohm, -10 V, -600 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -26.6 A, -20 V, 0.0051 ohm, -4.5 V, -1.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -3.7 A, -20 V, 0.12 ohm, -4.5 V, -1 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -3.7 A, -20 V, 0.12 ohm, -4.5 V, -1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 0.083 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6.2 A, -20 V, 0.011 ohm, -4.5 V, -800 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0072 ohm, -4.5 V, -1 V
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, 0.0072OHM, -35A, POWERPAK 1212
(EN)VISHAY
晶体管, MOSFET, P沟道, -40 A, -20 V, 0.004 ohm, -10 V, -2.2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.041 ohm, -4.5 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -16 A, -20 V, 0.026 ohm, -4.5 V, -500 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.03 ohm, -4.5 V, -1.5 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -4 A, -20 V, 48 mohm, -4.5 V, -1.4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.015 ohm, -4.5 V, -1.2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -18 A, -20 V, 0.0073 ohm, -4.5 V, -1 V
(EN)
TOSHIBA
晶体管, MOSFET, P沟道, 100 mA, -20 V, 8 ohm, -4 V, 1.1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -580 mA, -20 V, 420 mohm, -4.5 V, 700 mV
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, P沟道, 2.3 A, -20 V, 0.095 ohm, -4.5 V, -450 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, P沟道, 2.3 A, -20 V, 0.095 ohm, -4.5 V, -450 mV
(EN)
