规格：漏源电压, Vds -20V,
TOSHIBA
晶体管, MOSFET, P沟道, 100 mA, -20 V, 8 ohm, -4 V, 1.1 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 4.2 A, -20 V, 45 mohm, -4.5 V, -500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 1.9 A, -20 V, 0.127 ohm, -4.5 V, -900 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 90 mohm, -4.5 V, -400 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 0.048 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 760mA SC-75
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -1 A, -20 V, 0.175 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 3.1 A, -20 V, 0.058 ohm, -4.5 V, -950 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -550 mV
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -9 A, -20 V, 0.018 ohm, -4.5 V, -1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.029 ohm, -4.5 V, -900 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -350 mA, -20 V, 0.8 ohm, -1.8 V, -450 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, 1.6 A, -20 V, 0.065 ohm, 10 V, -1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -150 mA, -20 V, 2 ohm, -4.5 V, -700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.8 A, -20 V, 0.026 ohm, -4.5 V, -1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, 4.2 A, -20 V, 0.049 ohm, -4.5 V, -700 mV
(EN)
NEXPERIA
晶体管, MOSFET, 沟, P沟道, -1.2 A, -20 V, 0.17 ohm, -4.5 V, -700 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.0024 ohm, -4.5 V, -1 V
(EN)
INTERNATIONAL RECTIFIER
功率场效应管, MOSFET, P沟道, HEXFET, -20V, -2.6A, SOT-23
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -1.7 A, -20 V, 0.27 ohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1 A, -20 V, 300 mohm, -4.5 V, -600 mV
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.03 ohm, -4.5 V, -700 mV
(EN)
