规格：漏源电压, Vds -20V,
VISHAY
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0035 ohm, -10 V, -400 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -20 A, -20 V, 0.0199 ohm, -4.5 V, -850 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.6 A, -20 V, 0.048 ohm, -4.5 V, -650 mV
(EN)
VISHAY
MOSFET, DUAL P CHANNEL, -20V, 0.0275OHM, -8A, SOIC-8
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, -4.9A, SOIC-8
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -22 A, -20 V, 0.0049 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -24 A, -20 V, 0.041 ohm, -4.5 V, -700 mV
(EN)
ROHM
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.0161 ohm, -4.5 V, -1.2 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.048 ohm, -4.5 V, -1 V
(EN)
ROHM
晶体管, MOSFET, P沟道, 1.5 A, -20 V, 340 mohm, -4.5 V, -2 V
(EN)
ROHM
晶体管, MOSFET, P沟道, 1.5 A, -20 V, 340 mohm, -4.5 V, -2 V
(EN)
ROHM
晶体管, MOSFET, P沟道, 1.5 A, -20 V, 340 mohm, -4.5 V, -2 V
(EN)
ROHM
晶体管, MOSFET, P沟道, 1.5 A, -20 V, 430 mohm, -4.5 V, -2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -780 mA, -20 V, 0.38 ohm, -4.5 V, -1.2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -60A, POWERPAK SO-8
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
(EN)ROHM
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.055 ohm, -4.5 V, -2 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.9 A, -20 V, 0.0265 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, -2.4A, SuperSOT, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 55 mohm, -4.5 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4.1 A, -20 V, 0.07 ohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1 A, -20 V, 300 mohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.8 A, -20 V, 0.019 ohm, -5 V, -500 mV
(EN)
NEXPERIA
场效应管, MOSFET, P 通道, -20V, -3.9A, 3-SOT-23
(EN)
