The AP2306AGN-HF-3TR from Advanced Power Electronics Corp is a surface mount, N channel enhancement mode power MOSFET in SOT-23 package. This MOSFET provide designers with best combiation of fast switching, low resistance and cost effectiveness. The device is best suited for medium current applications such as load switches.
Supports 2.5V gate drive
Drain to source voltage of 30V
Gate to source voltage of ±8V
Continuous drain current (Id) of 5A at 25°C
Power dissipation (pd) of 1.38W
Operating junction temperature range from -55°C to 150°C