The AT45DB041E-SHN-B is a 1.65V minimum, serial-interface sequential access Flash Memory ideally suited for a wide variety of digital voice, image, program code and data storage applications. This also supports the RapidS serial interface for applications requiring very high speed operation. Its 4194304-bit of memory are organized as 2048 pages of 256 or 264 bytes each. In addition to the main memory, the memory also contains two SRAM buffers of 256/264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a systems ability to write a continuous data stream. In addition the SRAM buffers can be used as additional system scratch pad memory and E2 PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.
Continuous read capability through entire array
Two fully independent SRAM data buffers
Program and erase suspend/resume
100000 Program/erase cycles per page minimum endurance
