产品分类：MOSFET驱动器,品牌：TEXAS INSTRUMENTS,规格：驱动器封装类型 SOIC,
TEXAS INSTRUMENTS
MOSFET & IGBT驱动器, AEC-Q100, 3 V至5.5 V电源, 2.5 A & 5 A输出, 110 ns继电器, SOIC-16
(EN)TEXAS INSTRUMENTS
MOSFET & IGBT驱动器, AEC-Q100, 2.25 V至5.5 V电源, 2.5 A & 5 A输出, 110 ns继电器, SOIC-16
(EN)TEXAS INSTRUMENTS
MOSFET & IGBT驱动器, AEC-Q100, 3 V至5.5 V电源, 2.5 A & 5 A输出, 110 ns继电器, SOIC-16
(EN)
TEXAS INSTRUMENTS
DRIVER, MOSFET, LOW-SIDE, SOIC-16
(EN)TEXAS INSTRUMENTS
驱动器芯片, MOSFET, 低压侧, 8.5V-40V电源, 600mA输出, 350ns延迟, SOIC-16
(EN)
TEXAS INSTRUMENTS
双路驱动器, MOSFET, 低压侧, 4V-15V电源, 4A输出, 35ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
双路驱动器, MOSFET, 低压侧, 3.5V-14V电源, 5A输出, 25ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
双路驱动器, MOSFET, 低压侧, 4V-15V电源, 4A输出, 35ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
门驱动器, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
驱动器芯片, MOSFET, 驱动器, 半桥, 8V-14V电源, 1A输出, 30ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
芯片, IGBT/MOSFET, 低压侧, 4.5V-18V电源, 5A输出, SOIC-8
(EN)TEXAS INSTRUMENTS
双路驱动器芯片, MOSFET, 低压侧, 4.75V-24V电源, 500mA输出, 30ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
芯片, MOSFET, 低压侧, 4V-15V电源, 9A输出, 35ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
驱动器芯片, MOSFET, 驱动器, 高压侧, 4V-14V电源, 2A输出, 24ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
门驱动器, IGBT/MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SOIC-8
(EN)
TEXAS INSTRUMENTS
芯片, MOSFET驱动器
(EN)TEXAS INSTRUMENTS
双路驱动器, MOSFET, 低压侧, 4V-15V电源, 4A输出, 35ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
驱动器, MOSFET, 低压侧, 4V-15V电源, 4A输出, SOIC-8
(EN)TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 低压侧, 4.5V-18V电源, 5A输出, 13ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
复合门驱动器, 低压侧, 3.5V-14V电源, 5A输出, 25ns延迟, SOIC-8
(EN)
TEXAS INSTRUMENTS
驱动器, IGBT, MOSFET, 高压侧, 3V-5.5V电源, 2.5A输出, 200ns延迟, SOIC-16
(EN)TEXAS INSTRUMENTS
双路驱动器, MOSFET, 低压侧, 3.5V-14V电源, 5A输出, 25ns延迟, SOIC-8
(EN)TEXAS INSTRUMENTS
双路驱动器, MOSFET, 高压侧和低压侧, 9V-14V电源, 2A输出, 22ns延迟, SOIC-8
(EN)
TEXAS INSTRUMENTS
驱动器, MOSFET, 高压侧和低压侧, 8V-17V电源, 4A输出, 17ns延迟, SOIC-8
(EN)
TEXAS INSTRUMENTS
芯片, 场效应管, MOSFET驱动器, 低/高压侧, SOIC-14
(EN)
