产品分类：非易失性RAM,规格：工作温度最小值 0°C,
MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 256 Kbit, 32K x 8位, 100 ns, EDIP
(EN)
STMICROELECTRONICS
芯片, 非易失性存储器 10年内部电池供电 256K
(EN)
STMICROELECTRONICS
芯片, SRAM, ZEROPOWER? 16K
(EN)
MAXIM INTEGRATED PRODUCTS
芯片, 多路复用器/开关, 模拟, 低电压, 4053
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 64 Kbit, 8K x 8位, 150 ns, EDIP
(EN)
MAXIM INTEGRATED PRODUCTS
芯片, 存储器, NVSRAM, 256K, 全静态, 1230
(EN)STMICROELECTRONICS
芯片, 非易失性存储器 10年内部电池供电 16K
(EN)
STMICROELECTRONICS
芯片, SRAM, ZEROPOWER? 64K
(EN)STMICROELECTRONICS
芯片, SRAM, ZEROPOWER? 64K
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 64 Kbit, 8K x 8位, 200 ns, EDIP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 256 Kbit, 32K x 8位, 120 ns, EDIP
(EN)
STMICROELECTRONICS
芯片, SRAM模块, 16Kb, 内含电池
(EN)
MAXIM INTEGRATED PRODUCTS
芯片, 存储器, NVRAM, CMOS 64K, 1225, DIP28
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 16 Kbit, 2K x 8位, 150 ns, EDIP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 16 Kbit, 2K x 8位, 200 ns, EDIP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 256 Kbit, 32K x 8位, 150 ns, EDIP
(EN)
MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 1 Mbit, 128K x 8位, 70 ns, PWRCP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 256 Kbit, 32K x 8位, 200 ns, EDIP
(EN)
MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 1 MB, 128K x 8位, 100 ns, PWRCP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 1 Mbit, 128K x 8位, 120 ns, EDIP
(EN)STMICROELECTRONICS
芯片, SRAM, ZEROPOWER? 64K
(EN)STMICROELECTRONICS
芯片, SRAM, 非易失性, 256K
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 256 Kbit, 32K x 8位, 120 ns, EDIP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 256 Kbit, 32K x 8位, 150 ns, EDIP
(EN)MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 256 Kbit, 32K x 8位, 70 ns, EDIP
(EN)
