STMICROELECTRONICS
芯片, 非易失性存储器 10年内部电池供电 256K
MICROCHIP
非易失随机存储器 (NVRAM), EERAM, 16 Kbit, 2K x 8位, I2C, DIP
STMICROELECTRONICS
芯片, SRAM, ZEROPOWER? 16K
MICROCHIP
非易失随机存储器 (NVRAM), EERAM, 16 Kbit, 2K x 8位, I2C, DIP
MAXIM INTEGRATED PRODUCTS
芯片, 存储器, NVSRAM, 256K, 全静态, 1230
STMICROELECTRONICS
芯片, 非易失性存储器 10年内部电池供电 16K
STMICROELECTRONICS
芯片, SRAM, ZEROPOWER? 64K
STMICROELECTRONICS
芯片, SRAM, ZEROPOWER? 64K
STMICROELECTRONICS
芯片, SRAM模块, 16Kb, 内含电池
MAXIM INTEGRATED PRODUCTS
芯片, 存储器, NVRAM, CMOS 64K, 1225, DIP28
STMICROELECTRONICS
芯片, SRAM, ZEROPOWER? 64K
STMICROELECTRONICS
芯片, SRAM, 非易失性, 256K
STMICROELECTRONICS
芯片, SRAM, ZEROPOWER? 64K
MICROCHIP
非易失随机存储器 (NVRAM), EERAM, 4 Kbit, 512 x 8位, I2C, DIP
MAXIM INTEGRATED PRODUCTS
芯片, 存储器, NVSRAM, 1024KB, 128KX8, 32EDIP
MAXIM INTEGRATED PRODUCTS
非易失随机存储器 (NVRAM), SRAM, 64 Kbit, 32K x 8位, 并行, 120 ns, DIP
GREENWICH INSTRUMENTS
芯片, 非易失性存储器模块 256K