产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOIC,
VISHAY
晶体管, MOSFET, P沟道, 13.7 A, -8 V, 0.0075 ohm, -4.5 V, -0.45 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -10.8 A, -40 V, 0.011 ohm, -10 V, -1.6 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 8 A, -20 V, 24 mohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 20 A, -30 V, 0.0038 ohm, -10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 11mA
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8 A, 60 V, 20 mohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.8 A, -30 V, 15 mohm, -10 V, -1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 30 V, 0.008 ohm, 10 V, 1.8 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 9.5A, SOIC-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 13.5 A, 30 V, 0.007 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.3 A, -30 V, 0.042 ohm, -10 V, -1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 32.1 A, 60 V, 0.0035 ohm, 10 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -20 A, -30 V, 3.9 mohm, -10 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 16 A, -12 V, 7 mohm, -4.5 V, -900 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11 A, -30 V, 0.0108 ohm, -10 V, -2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 30 V, 11.5 mohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -6.2 A, -40 V, 0.025 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0037 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 4.6 A, -30 V, 70 mohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 60 V, 14 mohm, 10 V, 2.4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -10 A, -30 V, 20 mohm, 10 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -30 V, 0.0073 ohm, -10 V, -1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.0094 ohm, 10 V, 4.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 80 V, 0.0115 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0069 ohm, 10 V, 2.35 V
(EN)
