产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 114W,
NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 100 V, 38.6 mohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 71 A, 100 V, 10 mohm, 10 V, 1.85 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 100 V, 0.0063 ohm, 10 V, 2.7 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0047 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 63 A, 100 V, 0.0103 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.00465 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 63 A, 100 V, 12.2 mohm, 10 V, 1.85 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 550 V, 0.22 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 10.5A, TO220AB-3
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 60 V, 0.018 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 10.5A, TO-263-3
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 109 A, 60 V, 0.0042 ohm, 10 V, 2.2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 109 A, 60 V, 0.0042 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0047 ohm, 10 V, 2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 45 A, 75 V, 20.9 mohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 100 V, 38.6 mohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)
