产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 74W,
NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 80 V, 20 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.5 A, 400 V, 1 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0008 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00075 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.031 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 4.5 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0012 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.023 ohm, 5 V, 1.6 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.5 A, 400 V, 1 ohm, 10 V, 4.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 40 V, 6.6 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 44 A, 60 V, 12.3 mohm, 10 V, 3 V
(EN)VISHAY SILICONIX
场效应管, MOSFET, N沟道
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 89 A, 40 V, 0.0041 ohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 800 mohm, -10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.4 ohm, 10 V, 4.5 V
(EN)VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
场效应管, MOSFET, P沟道, TO-220AB
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 0.8 ohm, -10 V, -4 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00186 ohm, 10 V, 1.65 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8.1 A, 250 V, 0.45 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, HEXFET, P沟道, -18 A, -50 V, 0.093 ohm, -10 V, -4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 55 V, 35 mohm, 5 V, 2.5 V
(EN)VISHAY
场效应管, N通道, MOSFET, 250V, 8.1A TO-220
(EN)
