产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 750mW,
VISHAY
晶体管, MOSFET, N沟道, 3.9 A, 40 V, 0.036 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 850 mA, 30 V, 0.4 ohm, 4.5 V, 400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.04 ohm, -4.5 V, -900 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -3 A, -40 V, 0.065 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.063 ohm, -10 V, -3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -150V, 690mA, TO-236
(EN)VISHAY
晶体管, MOSFET, P沟道, -530 mA, -150 V, 1 ohm, -10 V, -4.5 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -3A, -12V, 750mW
(EN)VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
(EN)VISHAY
场效应管, MOSFET, P沟道, -3.2A, -30V, 1.25W
(EN)VISHAY
场效应管, MOSFET, N沟道, 3A, 40V, 750mW
(EN)VISHAY
场效应管, MOSFET, P沟道, -20V, 4.7A TO-236
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -12 V, 0.084 ohm, -4.5 V, -700 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 33 mohm, 4.5 V, 950 mV
(EN)VISHAY
场效应管, MOSFET, N沟道, 30V, 4A, TO-236
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.9 A, 20 V, 0.025 ohm, 4.5 V, 850 mV
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 200 mA, -240 V, 15 ohm, -10 V, -1.4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3 A, -8 V, 0.0162 ohm, -4.5 V, -800 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 650 mV
(EN)VISHAY
场效应管, MOSFET, P沟道, -30V, 4A, TO-236
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.6 A, -30 V, 190 mohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.6 A, -20 V, 0.073 ohm, -4.5 V, -700 mV
(EN)VISHAY
场效应管, MOSFET, N沟道, 40V, 3.9A, TO-236, 整卷
(EN)VISHAY
场效应管, P通道, MOSFET, -150V, 690MA, TO-236
(EN)
