产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 540mW,
INFINEON
晶体管, MOSFET, P沟道, -600 mA, -30 V, 600 mohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 610 mA, -30 V, 600 mohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -760 mA, -30 V, 0.6 ohm, -10 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -5 A, -20 V, 0.034 ohm, -4.5 V, -700 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, -780 mA, -20 V, 0.6 ohm, -4.5 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 30 V, 0.25 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.25 ohm, 4.5 V, 700 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 250 mohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -5.7 A, -20 V, 0.027 ohm, -4.5 V, -700 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 250 mohm, 4.5 V, 700 mV
(EN)
INFINEON
场效应管, MOSFET, N沟道, Micro-3, 30V
(EN)INFINEON
晶体管, MOSFET, P沟道, 610 mA, -30 V, 600 mohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -600 mA, -30 V, 600 mohm, -10 V, -1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 6.2 A, 30 V, 0.02 ohm, 10 V, 1.5 V
(EN)
