产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 400mW,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.1 ohm, -4.5 V, -750 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 850 mA, 30 V, 300 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 1.3A SOT-23
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.9 A, 12 V, 0.057 ohm, 4.5 V, 600 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 140 mohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3.9 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2.4 A, -30 V, 0.1 ohm, -10 V, -1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3.9 V
(EN)NEXPERIA
晶体管, MOSFET, AEC-Q101, N沟道, 1.1 A, 80 V, 0.345 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 600 mA, -20 V, 600 mohm, -4.5 V, -1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 12 V, 0.034 ohm, 4.5 V, 650 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 0.14 ohm, -4.5 V, -1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.044 ohm, 10 V, 1.4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -900 mA, -8 V, 0.28 ohm, -4.5 V, -400 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 0.042 ohm, 4.5 V, 650 mV
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 4.7 A, 12 V, 0.036 ohm, 4.5 V, 600 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -8V, SC-88
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.13 A, -30 V, 0.155 ohm, -10 V, -3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 1 A, 20 V, 0.34 ohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)
