产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 2.8W,
INFINEON
晶体管, MOSFET, N沟道, 29 A, 30 V, 0.0094 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 55 V, 0.048 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, 汽车, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 150 V, 185 mohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 100 V, 0.161 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0057 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.01 ohm, -20 V, -1.8 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 16A, PQFN
(EN)INFINEON
晶体管, MOSFET, N沟道, 5 A, 55 V, 60 mohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 25V, 20A, PQFN-5
(EN)INFINEON
晶体管, MOSFET, N沟道, 5.1 A, 55 V, 0.0462 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 60 A, -20 V, 0.0088 ohm, -4.5 V, 850 mV
(EN)
VISHAY
MOSFET, P CHANNEL, -12V, -4A, SOT-363-6
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0042 ohm, 8 V, 1.2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2 A, -20 V, 0.05 ohm, -4.5 V, -400 mV
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.0043 ohm, -10 V, -3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.027 ohm, 4.5 V, 400 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 150 V, 0.185 ohm, 10 V, 5 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 30V, 60A, SON
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 60 A, -20 V, 0.0088 ohm, -4.5 V, 850 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 60 A, -20 V, 0.0088 ohm, -4.5 V, 850 mV
(EN)
TEXAS INSTRUMENTS
功率场效应管, MOSFET, P沟道, -20V, -60A, SON-8
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.0043 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 86 A, 60 V, 5.5 mohm, 10 V, 4 V
(EN)
