产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 1W,
INFINEON
晶体管, MOSFET, N沟道, 1.9 A, 55 V, 0.16 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, HEXFET, N沟道, 2 A, 55 V, 140 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.064 ohm, -4.5 V, -1.3 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 120 mA, 400 V, 17 ohm, 0 V
VISHAY
晶体管, MOSFET, N沟道, 600 mA, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 60 V, 100 mohm, 5 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -240 V, 12 ohm, -10 V, -2.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 4.5 V, 1.3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.064 ohm, -4.5 V, -1.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 35 V, 0.08 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.063 ohm, -4.5 V, -1.3 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.038 ohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 2 V
(EN)ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 1 A, 100 V, 0.37 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 370 mA, 500 V, 3 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 400 mA, 200 V, 1.6 ohm, 10 V, 2.8 V
(EN)ROHM
晶体管, MOSFET, AEC-Q101, P沟道, -2 A, -45 V, 0.13 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2 A, 55 V, 0.14 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.6 A, 100 V, 200 mohm, 10 V, 4 V
(EN)ROHM
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.028 ohm, 10 V, 2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.0121 ohm, 10 V, 2 V
(EN)ROHM
晶体管, MOSFET, AEC-Q101, P沟道, -2.5 A, -20 V, 0.07 ohm, -4.5 V, -2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 2.6 A, -60 V, 170 mohm, 20 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 1 V
(EN)
