产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 3.1W,
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 15.2A
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 13 A, 30 V, 0.0081 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 0.0144 ohm, 10 V, 3.7 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100V, 9.3A, PQFN
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 200 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.2 ohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0039 ohm, 8 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0035 ohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.5 A, 150 V, 0.041 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 1.4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4
(EN)VISHAY
晶体管, MOSFET, N沟道, 5 A, 150 V, 0.041 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 1.9 mohm, 8 V, 1.1 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 60V, 50A, 0.0078OHM, SON-8
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0019 ohm, 4.5 V, 1.1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19 A, 60 V, 0.0038 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 500 V, 850 mohm, 10 V
(EN)
INTERNATIONAL RECTIFIER
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 50A TO-263AB
(EN)VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 23 A, -100 V, 117 mohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, P CHANNEL, -60V, -1.8A, SOT-223-4
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0078 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 53 A, -60 V, 19.5 mohm, -10 V, -1 V
(EN)
